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| BSV52 SO2369/SO2369A SMALL SIGNAL NPN TRANSISTORS Type BSV52 SO2369 SO 2369A s Marking B2 N11 N81 s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW CURRENT, FAST SWITCHING APPLICATIONS. 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CBO V CEO V EBO I CM P t ot T stg Tj Parameter SO2369/A Collector-Emitter Voltage (V BE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value BSV52 20 20 12 5 0.2 200 -65 to 150 150 40 40 15 4.5 Uni t V V V V A mW o o C C March 1996 1/5 BSV52/SO2369/SO2369A THERMAL DATA R t hj-amb * R th j-SR * Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 620 400 o o C/W C/W * Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = 20 V for SO2369/SO 2369A V CB = 10 V for BSV52 o T j = 150 C V CB = 10 V for BSV52 V CB = 20 V for SO2369A I C = 10 A for SO2369/SO 2369A for BSV52 I C = 10 mA for SO2369/SO 2369A for BSV52 I C = 10 A for SO2369/SO 2369A for BSV52 I E = 10 A for SO2369/SO 2369A for BSV52 I C = 10 mA IB = 0.3 mA for BSV52 IB = 1 mA I C = 10 mA for SO2369A for BSV52 IB = 3 mA I C = 30 mA for SO2369 BSV52 IB = 5 mA I C = 50 mA for BSV52 I C = 100 mA I B = 10 mA for SO2369A I C = 10 mA IB IB I C = 30 mA for SO2369A IB I C = 50 mA for BSV52 I C = 100 mA I B for SO2369A IC IC IC IC IC IC IC = 1 mA = 3 mA = 5 mA 1.2 = 10 mA 1.6 for BSV52 for SO2369A for All typ es for SO2369A for BSV52 for SO2369A for SO2369 25 40 40 30 25 20 20 120 120 V V 0.7 40 20 15 12 40 20 4.5 5 0.3 0.2 0.25 0.25 0.4 0.5 0.85 1.15 Min. Typ . Max. 400 100 5 400 Un it nA nA A nA V V V V V V V V V V V V V V V V I CES Collector Cut-off Current (V BE = 0) V (BR)CES Collector-Emitter Breakdown Voltage (I B = 0) V ( BR)CEO Collector-Emitter Breakdown Voltage (I B = 0) V ( BR)CBO Collector-Base Breakdown Voltage (I B = 0) V (BR)EBO Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Saturation Voltage V CE(sat ) V BE(s at) Collector-Base Saturation Voltage h FE DC Current G ain =1mA VCE =1V =10mA VCE =0.35V =10mA VCE =1V =30mA VCE =0.4V =50mA VCE =1V =100mA V CE =1V =100mA V CE =2V Pulsed: Pulse duration = 300 s, duty cycle 2 % 2/5 BSV52/SO2369/SO2369A ELECTRICAL CHARACTERISTICS (Continued) Symb ol fT Parameter Transition F requency Test Cond ition s I C = 10 mA VCE = 10V f = 100MHz for SO2369A for BSV52/SO 2369 IE = 0 V CE = 5 V f = 1 MHz f = 1 MHz Min. 500 400 4 4.5 12 13 18 Typ . Max. Un it MHz MHz pF pF ns ns ns C CB C EB t on ts t of f Collector Base Capacitance Emitter Base Capacitance Turn On T ime Storage Time Turn Off T ime IC = 0 V EB = 1 V for BSV52 I C = 10 mA I B = 3 mA I C = 10 mA VBE = -0.5 V I B1 = -IB2 = 10mA I C = 10 mA IB1 = 3 mA I B2 = -1.5 mA Pulsed: Pulse duration = 300 s, duty cycle 2 % 3/5 BSV52/SO2369/SO2369A SOT-23 MECHANICAL DATA mm MIN. A B C D E F G H L M N O 0.85 0.65 1.20 2.80 0.95 1.9 2.1 0.38 0.3 0 0.3 0.09 TYP. MAX. 1.1 0.95 1.4 3 1.05 2.05 2.5 0.48 0.6 0.1 0.65 0.17 MIN. 33.4 25.6 47.2 110.2 37.4 74.8 82.6 14.9 11.8 0 11.8 3.5 mils TYP. MAX. 43.3 37.4 55.1 118 41.3 80.7 98.4 18.8 23.6 3.9 25.6 6.7 DIM. 0044616/B 4/5 BSV52/SO2369/SO2369A Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersede and replaces all information previously supplied. s SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A . 5/5 |
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